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BDY28 - 250V NPN silicon transistot, diffused mesa 200V NPN silicon transistot, diffused mesa TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 6A I(C) | TO-3 晶体管|晶体管|叩| 250V五(巴西)总裁| 6A条一(c)|3 NPN SILICON TRANSISTORS DIFFUSED MESA 180V NPN silicon transistot, diffused mesa

BDY28_242552.PDF Datasheet

 
Part No. BDY28 185T2 183T2 BDY27 184T2 BDY26 185T2C
Description 250V NPN silicon transistot, diffused mesa
200V NPN silicon transistot, diffused mesa
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 6A I(C) | TO-3 晶体管|晶体管|叩| 250V五(巴西)总裁| 6A条一(c)|3
NPN SILICON TRANSISTORS DIFFUSED MESA
180V NPN silicon transistot, diffused mesa

File Size 165.28K  /  4 Page  

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Part: BDY54
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    50: $1.20
  100: $1.14
1000: $1.08

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 Full text search : 250V NPN silicon transistot, diffused mesa 200V NPN silicon transistot, diffused mesa TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 6A I(C) | TO-3 晶体管|晶体管|叩| 250V五(巴西)总裁| 6A条一(c)|3 NPN SILICON TRANSISTORS DIFFUSED MESA 180V NPN silicon transistot, diffused mesa


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